ũ űԼ ø ´. 15 1 45 ũ 0.8%(150) 17800 ŷǰ ִ.
ڰÿ ũ Z ߱(Samsung (China) Semiconductor) 94 Ը ݵü ް ξٰ ̳ ǥߴ. Ⱓ 12Ϻ 9 15ϱ. ̹ ũ 13 ø 537ġ ݵü ϰ ƴ. õ ֱݾ ĵ 68.5% ϴ ݾ̴.
ũ 1б ߴ. 168 59.7% ߰, 24 79.0% ްߴ. Ҵ ַ ȭ ߱ Ǯ̵ȴ. ֱ Z ݵü ü 3D(3) NAND ڸ ũ ַ ϴ LPCVD(ȭб) 2D(2, ) NAND Ưȭ ̱ ̴.
2бʹ ȴ .þ迡 ũ ALD(Atomic Layer Deposition, ) ߴ. DRAM ̼ȭ ݵü ü ÷ ̼ȭ ϰ ִµ ALD ϰ ִ. ALD 3 پ ϵ β ڸ ϴ.
System LSI(ý ݵü) Ǵ SEG(Selective Epitaxial Growth, ܰ ) ȴ. SEG ̱ ö̵ Ʈ(Applied Materials)簡 ũ ̸ ȭߴ. ֱ Zڰ ý۹ݵü 14 (FIn-FET) , ý۹ݵü Ź ˷ ȴ.
Ǿ谡 ̴. ü (WISEfn) ũ 1413 80.2%, 398 223.6% δ. ġ ֱ 3 KDB 6 ǻ翡 ǥ ġ հ̴.
1б ȯ ݿ ũ ְ(PER) 38.9. ְڻ(PBR) 2.33, ڱںͷ(ROE) 5.9%.
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